Heedo Na: search on Z-Library

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1

Reproducible resistance switching of defect-engineered NiOx with metallic Nb impurity

Jonggi Kim, Heedo Na, Sunghoon Lee, Kyumin Lee, Jung-Ho Yoo, Dae-Hong Ko, Hyunchul Sohn

Journal:

Thin Solid Films

Year:

2011

Language:

english

File:

PDF, 822 KB

english, 2011

2

RESET-first unipolar resistance switching behavior in annealed Nb2O5 films

Lee, Kyumin, Kim, Jonggi, Mok, In-Su, Na, Heedo, Ko, Dae-Hong, Sohn, Hyunchul, Lee, Sunghoon, Sinclair, Robert

Journal:

Thin Solid Films

Year:

2014

Language:

english

File:

PDF, 1.19 MB

english, 2014

3

OUD'S ADVOCAAT.

Kim, Jonggi, Lee, Sunghoon, Lee, Kyumin, Na, Heedo, Mok, In-Su, Kim, Youngjae, Ko, Dae-Hong, Sohn, Hyunchul

Journal:

Year:

1925

Language:

english

File:

PDF, 184 KB

english, 1925

4

High-mobility property of crystallized In-Te chalcogenide materials

Sung Jin Park, Seung-Jong Park, Dambi Park, Min An, Mann-Ho Cho, Jonggi Kim, Heedo Na, Sung hoon Park, Hyunchul Sohn

Journal:

Electronic Materials Letters

Year:

2012

Language:

english

File:

PDF, 876 KB

english, 2012

5

Effect of W impurity on resistance switching characteristics of NiOx films

Jonggi Kim, Heedo Na, Sunghoon Lee, Yong-Hun Sung, Jung-Ho Yoo, Doo-Sung Lee, Dae-Hong Ko, Hyunchul Sohn

Journal:

Current Applied Physics

Year:

2011

Language:

english

File:

PDF, 779 KB

english, 2011

6

Physical and electrical properties of band-engineered SiO2/(TiO2)x(SiO2)1−xstacks for nonvolatile memory applications

Oh, Jinho, Na, Heedo, Mok, In-Su, Kim, Jonggi, Lee, Kyumin, Sohn, Hyunchul

Journal:

Applied Physics A: Materials Science & Processing

Year:

2012

Language:

english

File:

PDF, 759 KB

english, 2012

7

Effect of thermal annealing on resistance switching characteristics of Pt/ZrO2/TiN stacks

Kim, Jonggi, Lee, Kyumin, Kim, Yonjae, Na, Heedo, Ko, Dae-Hong, Sohn, Hyunchul, Lee, Sunghoon

Journal:

Materials Chemistry and Physics

Year:

2013

Language:

english

File:

PDF, 2.45 MB

english, 2013

8

Effect of SiO2 tunnel layer processes on the characteristics of MONOS charge trap devices with poly-Si channels

Na, Heedo, Oh, Jinho, Lee, Kyumin, Kim, Jonggi, Lee, Sunghoon, Lim, Dong Hyeok, Cho, Mann-Ho, Sohn, Hyunchul

Journal:

Microelectronic Engineering

Year:

2013

Language:

english

File:

PDF, 2.01 MB

english, 2013

9

RESET-first bipolar resistive switching due to redox reaction in ALD HfO2 films

Kim, Jonggi, Lee, Sunghoon, Lee, Kyumin, Na, Heedo, Mok, In-Su, Kim, Youngjae, Ko, Dae-Hong, Sohn, Hyunchul

Journal:

Microelectronic Engineering

Year:

2013

Language:

english

File:

PDF, 1.41 MB

english, 2013

10

Reviewer Thanks

Kim, Jonggi, Lee, Sunghoon, Lee, Kyumin, Na, Heedo, Mok, In-Su, Kim, Youngjae, Ko, Dae-Hong, Sohn, Hyunchul

Journal:

Year:

2012

File:

PDF, 64 KB

2012

11

SANITATION IN EDINBURGH.

Kim, Jonggi, Lee, Sunghoon, Lee, Kyumin, Na, Heedo, Mok, In-Su, Kim, Youngjae, Ko, Dae-Hong, Sohn, Hyunchul

Journal:

Year:

1899

Language:

english

File:

PDF, 187 KB

english, 1899

12

[IEEE 2011 Materials for Advanced Metallization (MAM) - Dresden, Germany (2011.05.8-2011.05.12)] 2011 IEEE International Interconnect Technology Conference - Effect of oxygen diffusion into TiN on resistance switching characteristics of ZrO2 films with annealing temperatures

Kim, Jonggi, Lee, Sunghoon, Na, Heedo, Lee, Kyumin, Sohn, Hyunchul

Year:

2011

Language:

english

File:

PDF, 246 KB

english, 2011

13

Anion-Migration-Induced Bipolar Resistance Switching in Electrochemically Deposited TiO[sub x] Films

Lee, Sunghoon, Na, Heedo, Kim, Jonggi, Moon, Jiwon, Sohn, Hyunchul

Journal:

Journal of The Electrochemical Society

Year:

2011

Language:

english

File:

PDF, 328 KB

english, 2011

14

The effect of aluminum doping on crystallinity, non-lattice oxygen, and resistance switching of Al-doped HfO2films deposited by reactive sputtering

Lee, Kyumin, Na, Heedo, Sohn, Hyunchul, Kim, Jonggi

Journal:

Journal of the Korean Physical Society

Year:

2014

Language:

english

File:

PDF, 1.57 MB

english, 2014

15

Performance improvement of metal-Al2O3-HfO2-oxide-silicon memory devices with band-engineered Hf-aluminate/SiO2 tunnel barriers

Oh, Jinho, Na, Heedo, Lee, Kyumin, Sohn, Hyunchul, Heo, Min-Young

Journal:

Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures

Year:

2013

Language:

english

File:

PDF, 1.28 MB

english, 2013

16

Effect of (HfO2) X (Al2O3)1−X /SiO2 double-layered blocking oxide on program and erase speed in charge trapping memory devices

Oh, Jinho, Ko, Eun Jung, Na, Heedo, Ko, Dae-Hong, Sohn, Hyunchul

Journal:

Applied Physics

Year:

2016

Language:

english

File:

PDF, 865 KB

english, 2016

17

Characteristics of Junctionless Charge Trap Flash Memory for 3D Stacked NAND Flash

Oh, Jinho, Na, Heedo, Park, Sunghoon, Sohn, Hyunchul

Journal:

Journal of Nanoscience and Nanotechnology

Year:

2013

Language:

english

File:

PDF, 1.62 MB

english, 2013

18

Effect of aliovalent impurities on the resistance switching characteristics of sputtered hafnium oxide films

Lee, Kyumin, Kim, Youngjae, Na, Heedo, Sohn, Hyunchul

Journal:

Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures

Year:

2015

Language:

english

File:

PDF, 2.23 MB

english, 2015

19

Effect of thermal annealing sequence on the crystal phase of HfO 2 and charge trap property of Al 2 O 3 /HfO 2 /SiO 2 stacks

Na, Heedo, Jeong, Juyoung, Lee, Jimin, Shin, Hyunsu, Lee, Sunghoon, Sohn, Hyunchul

Journal:

Current Applied Physics

Year:

2017

Language:

english

File:

PDF, 1.09 MB

english, 2017

20

Effect of interfacial SiO2−y layer and defect in HfO2−x film on flat-band voltage of HfO2−x/SiO2−y stacks for backside-illuminated CMOS image sensors

Na, Heedo, Lee, Jimin, Jeong, Juyoung, Kim, Taeho, Sohn, Hyunchul

Journal:

Applied Physics

Year:

2018

Language:

english

File:

PDF, 2.83 MB

english, 2018